Study on properties of silicon nitride film prepared by PECVD for solar cells

Ziyou Zhou, Xianwu Cai, Wenfeng Liu

Article ID: 1356
Vol 4, Issue 2, 2021

VIEWS - 972 (Abstract) 265 (PDF)

Abstract


Silicon nitride film containing hydrogen is widely used as antireflection layer and passivation layer in the field of solar cell industrial production. Silicon nitride films containing hydrogen were prepared by industrial plasma enhanced chemical vapor deposition (PECVD) equipment. Fourier Transform Infrared Spectroscopy (FTIR) was used to analyze the composition of the film, to study the influence of reaction gas flow rate and high-frequency power on the composition and properties of the film, and to study the influence of silicon nitride film composition on the passivation effect of the silicon wafer through the minority carrier life of the silicon wafer, so as to clarify the direction of process adjustment in actual industrial production.

Keywords


PECVD; Fourier Transform Infrared; Silicon Nitride Film; Passivation

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References


1. Barbour JC, Stein HJ, Popov OA, et al. Silicon nitride formation from a silane-nitrogen electron cyclotron resonance plasma. Journal of Vacuum Science & Technology A 1991; 9(3): 480–486.

2. Garcia S, Martil I, Gonzalez Diaz G, et al. Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures. Journal of Applied Physics 1998; 83(1): 332–336.

3. Chang MJ, Lee JL. Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaNheterostructure field-effect transistors. Applied Physics Letters 2005; 86(17): 2101–2107.

4. Wan YM, Mclntosh KR, Thomson AF, et al. Recombination and thinfilm properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure. Applied Physics Letters 2015; 106(4): 1607–1612.

5. Smith DL, Alimonda AS, Chen CC, et al. Mechanism of SiNxHy deposition from NH3-SiH4 plasma. Journal of the Electrochemical Society 1990; 137: 614–618.

6. Smith DL. Controlling the plasma chemistry of silicon nitride and oxide deposition from silane. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 1993; 11(4): 1843–1846.

7. Oever PJ, Helden JH, Hemmen JL, et al. N, NH, and NH2 radical densities in a remote Ar-NH3-SiH4 plasma and their role in silicon nitride deposition. Journal of Applied Physics 2006; 100(9): 3303–3307.

8. Dekkers HFW, Beaucarne G. Molecular hydrogen formation in hydrogenated silicon nitride. Applied Physics Letters 2006; 89(21): 1914–1918.

9. Sopori BL, Deng X, Benner JP, et al. Hydrogen in silicon: A discussion of diffusion and passivation mechanisms. Solar Energy Materials and Solar Cells 1996; 41-42: 156–159.

10. Gupta SD, Hoex B, Fen L, et al. High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD. Proceedings of 37th Photovoltaic Specialists Conference; 19–24 June 2011; Seattle, Wa, USA. New York: IEEE; 2011. p. 001421–001423.




DOI: https://doi.org/10.24294/ace.v4i2.1356

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