The Influence of the Metal Microstructure on the Breakdown Mechanism of Schottky Diodes

Shahlar Gachayogli Askerov, M. G. Gasanov, L. KAbdullayeva


In this paper, the influence of the microstructure of a metal on the breakdown mechanism of diodes with a Schottky barrier is studied. It is shown that in electronic processes occurring in the contact between a metal and a semiconductor, the metal plays a very active role and is a more important contact partner than a semiconductor. Unlike the known mechanisms of breakdown of diodes (avalanche, tunnel and thermal), another mechanism is proposed in this paper - the geometric mechanism of the reverse current flow of Schottky diodes made using a metal with a polycrystalline structure. The polycrystallinity of a metal transforms a homogeneous contact into a complex system, which consists of parallel-connected multiple elementary contacts having different properties and parameters.

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S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), chap. 1, p. 34.

M.P. Lepseiter, S.M.Sze, Bell. Syst.Tech. 1968, J 47, p.195.

Askerov Sh.G., Report lab. For semiconductor devices Properties of Al-nSi Schottky barrier diodes. 1974, TUD, Lyngby.p.1-22

Аскеров Ш.Г., Миkроэлектроника, Вольт –амперная характеристика диодов Шоттки в обратном направлении. 1977. Эт.сер.93. т.1. №17, с.63-66

Afandiyeva I.M., Altındal Ş., Abdullayeva L.K. Illumination dependent electrical characteristics of PtSi/n-Si(111) Schottky Barrier Diodes (SBDs) at room temperature, Journal of Modern Technology & Engineering, vol.2, No.1, p.43-56, 2017

Шишкин Б.Б., Метод измерения термоэлектронной эмиссии «пятнистых» катодов. 1985. Радиотехника и электроника, т.ХХХ, вып.4, с.788-792.

Sh. G. Askerov and G. G. Kadimov, Izv. Akad. Nauk AzSSR, Ser. Fiz.-Tekh. Mat. Nauk, No. 2, 21 (1986).

Шахлар Аскеров, Физика неоднородного контакта металл –полупроводник, Lambert Academic Publishing, p.77, 2017

V. S. Fomenko, Emission Properties of Materials (Nauk. Dumka, Kiev, 1981), p.146 [in Russian].

Askerov, S.Q., Abdullayeva, L.K., M.H. Hasanov, Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions Semiconductors (2017) 51: 591-593.

Аскеров Ш.Г. Геометрический механизм пробоя диодов Шоттки. 1982.Тем. сб. АГУ Электронные явления в твердых телах и газах, Баку. с.25-54.

A. Yu. Loskutov and M. S. Mikhailov, Principles of the Complex System Theory (Moscow, Izhevsk, 2007), p. 17 [in Russian].


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