Effect of Zn2+ concentration on the zinc oxide properties prepared by electrochemical deposition

Abdellah Henni1,2, A. Karar3, A. Merrouche1, L. Telli1

Article ID: 641
Vol 2, Issue 1, 2019, Article identifier:

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Abstract


In this work, ZnO nanostructures are electrodeposited on ITO conducting substrate prepared from chloride baths. The influence of concentration of Zn2+on the electrochemical characteristics has been studied using cyclic voltammetry (CV) and chronoamperometry (CA) techniques. The Mott–Schottky measurements demonstrate an n-type semiconductor character for all samples with a carrier density varying between 1.47×1018 cm−3 and 3.14×1018 cm−3. Scanning electron microscopy (SEM) show arrays of vertically aligned ZnO nanorods (NRs) with good homogeneity. X-ray diffraction spectra demonstrate that films crystalline with the Würtzite structure with preferential (002) crystallographic orientation having c-axis perpendicular to the substrate. The high optical properties of the ZnO NRs with a low density of deep defects was checked by UV-Vis transmittance analyses, the band gap energy of films varies between 3.3 and 3.4 eV with transparency around 80-90 %.


Keywords


Electrochemical growth; ZnO; Nanorods; Thin films; Zinc concentration

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References


S. Sepulveda-Guzman, B. Reeja-Jayan, E. de la Rosa, A. Torres-Castro, V. Gonzalez-Gonzalez, M. Jose-Yacaman, Mater. Chem. Phys. 115 (2009)172-178.

O. Lupan, V.M. Guérin, I.M. Tiginyanu, V.V. Ursaki, L. Chowc, H. Heinrich, T. Pauporté, J. Photochem. Photobiol. A 211, (2010)65-73.

S. O’Brien, M.G. Nolan, M. Çopuroglu, J.A. Hamilton, I. Povey, L. Pereira, R. Martins, E. Fortunato, M. Pemble, Thin Solid Films 518(2010)4515-4519.

Y. Yang, W. Guo, Ken C. Pradel, G. Zhu, Y. Zhou, Y. Zhang, Y. Hu, L. Lin, Z.L. Wang, Nano Letters 12 (2012)2833-2838.

D. Pradhan, K.T. Leung, Langmuir 24(2008)9707-9716.

D.Chu,T.Hamada,K.Kato,Y .Masuda, Physical Status Solidi A 206 (2009)718-723.

Y.N. Chang, M. Zhang, L. Xia, J. Zhang, G. Xing, Materials 5 (2012)2850-2871.

L. Luo, Y.F. Zhang, S.S. Mao, L.W. Lin, Sensor. Actuator A-Phys. 127(2006)201-206.

T. Minami, T. Yamamoto, T. Miyata, Thin Solid Films 366 (2000)63-68.

B.M. Ateav, A.M. Bagamadova, V.V. Mamedov,A.K. Omaev, Mater. Sci. Eng. B 65 (1999)159-163.

X.W. Sun, H.S. Kwok, J. Appl. Phys. 86 (1999) 408-411.

A. El Hichou, M. Addou, J. Ebothé, M. Troyon, J. Lumin. 113 (2005)183-190.

K. M. K. Srivatsa, D. Chhikara, M. S. Kumar, J. Mater. Sci. Technol. 27 (2011) 701-706

A. Henni, A. Merrouche. L. Telli, A. Azizi, R. Nechache, Sci. Semicond. Process. 31 (2015) 380-385.

A. Henni, A. Merrouche. L. Telli, A. Karar, FI. Ezema, H. Haffar, J. Solid State Electrochem. 20(8) (2015) 2135-2142.

A. Henni, A. Merrouche. L. Telli, A. Karar, J. Electroanal.

Chem. 763 (2016) 149-154.

M.R. Khelladi, L. Mentar, A. Beniaiche, L. Makhloufi, A. Azizi, J. Mater. Sci.: Mater. Electron. 24 (2013)153-159.

M. Izaki, T. Omi, Appl. Phys. Lett. 68 (1996)2439-2440.

A. Goux, T. Pauporte, J. Chivot, D. Lincot, Electrochim. Acta 50 (2005)2239-2248.

T. Singh, D.K. Pandya, R. Singh, Opt. Mater. 35 (2013) 1493–1497.

M. Izaki, T. Omi, J. Electrochem. Soc. 143 (1996)L53-L55.

6 2.0 2.4 2.8 3.2 3.6 4.0 ( h )2(eV2cm-2)Energy (eV)5

Z.H. Gu, T.Z. Fahidy, J. Electrochem. Soc. 146 (1999)156-159.

D. Ramirez, D. Silva, H. Gomez, G. Riveros, R.E. Marotti, E.A. Dalchiele, Sol. Energy Mater. Sol. Cells 91 (2007)1458-1461.

T. Pauporte, D. Lincot, J. Electroanal. Chem. 517(2001)54-62.

L. Qi, H. Yu, Z. Lei, Q. Wang, Q. Ouyang, C. Li, Y. Chen, Appl. Phys. A 111 (2013)279-284.

M.C. Kao, H.Z. Chen, S.L. Young, Appl. Phys. A 98 (2010)595-599.

S. R. Morrison, Electrochemistry at Semiconductor and Oxidized Metal Electrodes, Plenum, New York, 1980, p. 127.

D. Pradhan, S.K. Mohapatra, S. Tymen, M. Misra, K.T. Leung, Mater. Express 1 (2011) 59-67.

J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15 (1966)627-637.




DOI: http://dx.doi.org/10.24294/ace.v1i3.641

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