Passivation effect analysis of passivation layer based on data analysis

Peng Li, Jun Wang

Article ID: 1346
Vol 4, Issue 2, 2021

VIEWS - 888 (Abstract) 233 (PDF)

Abstract


The passivation layer of solar cells directly affects the performance of solar cells. The fixed charge density and defect density at the interface of the passivation layer are the key parameters to analyze the passivation effect. Through establishing the MOS model to simulate the capacitance-voltage (C-V) curve of the passivation layer, and using the function to express the simulation curve, this paper establishes the function-based database. The C-V curve obtained from the experiment is compared with the database to find the corresponding function of the experimental data. The passivation parameters Nf and Dit are extracted for analyzing the passivation effect of the passivation layer.

Keywords


MOS Model; Database; Defect Density; Fixed Charge Density

Full Text:

PDF


References


1. Zheng X. Research on the passivation technology of crystalline silicon solar Cell [PhD thesis]. Hangzhou: Zhejiang University.

2. Lang F. Study on passivation properties of Al2O3 thin films for n-type solar cells (in Chinese). China High-Tech Enterprises 2016; 34: 28–29.

3. Wang J, Mottaghian SS, Baroughi MF. Passivation properties of atomic-layer-deposited hafnium and aluminum oxides on Si surfaces. IEEE Transactions on Electron Devices 2012; 59(2): 342–348.

4. Budhrajal V, Devayajanam S. Effect of SiO2 passivation on CdTe based solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC); 2015 Jun 14–19; New Orleans. IEEE; 2015. p. 1–3.

5. Xin Z, Duttagupta S, Tang M, et al. An improved methodology for extracting the interface defect density of passivated silicon solar cells. IEEE Journal of Photovoltaics 2016; 6(5): 1080–1089.

6. Fedorenko YG, Truong L, Afhnas’ev VV, et al. Energy distribution of the (100)Si/HfO2 interface states. Applied Physics Letters 2004; 84(23): 4771–4773.

7. Girisch R, Mertens BP, De Keersmaecker RF. Determination of Si-SiO2/sub 2/interface recombination parameters using a gate-controlled point-junction diode under illumination. IEEE Transactions on Electron Devices 1988; 35(2): 203–222.

8. Schroeder DK. Semiconductor material and device characterization. Wiley 1998; 44(4): 107–108.

9. Aberle AG, Glunz S, Warta W. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at Si-SiO2 interface. Journal of Applied Physics 1992; 71(9): 4422–4431.

10. Van de Loo BWH, Knoops HCM, Dingemans G, et al. “Zero-charge” SiO2/AL2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition. Solar Energy Materials & Solar Cells 2015; 143: 450–456.




DOI: https://doi.org/10.24294/ace.v4i2.1346

Refbacks

  • There are currently no refbacks.


Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.