Growth rate and structural characterization of diamond layers produced by CVD methods

Kazimierz Paprocki 1, Kazimierz Fabisiak 1, Wacław Bała 1, Mirosław Szybowicz 2

Article ID: 620
Vol 0, Issue 0, 2018, Article identifier:

VIEWS - 260 (Abstract) 48 (PDF)


This paper discuss the effect of working gas  pressure, changed in the range of 20-100 mbar,  and hydrocarbon concentration, changed in the range of 2.3-3.0%,  on the structural properties of polycrystalline diamond (PCD) films synthesized in a hot filament chemical vapor deposition (HFCVD) system. As a working gas the mixture of  CH3OH  diluted in H2 was used.

Characterization of CVD diamond were performed by using  three most common techniques such as Scanning Electron Microscopy (SEM),  Raman and X-ray diffraction (XRD), which have been intensively employed for characterizing CVD diamond layers.

With increasing hydrocarbon concentration at each deposition pressure, the decrease of the diamond grain sizes was observed, accompanied with increasing sp2/sp3 ratio.

The pressure exerted has rather small influence on the film growth rate as it is indicated by diamond film thickness. Such pressure dependence of the diamond growth rate was suggested to result from two competing effects of pressure on the concentration of carbon radicals, responsible for diamond growth,  close to the diamond growth surface.



diamond layers; XRD; crystallographic orientation

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