On some specific features of the silicon carbide heteropolytype epitaxy

S. Yu. Davydov 1, A. A. Lebedev 1,2, L. V. Shakhov 1, P. V. Bulat 2

Abstract


Specific features of the SiC layer formation having the polytype differs from the SiC substrate polytype are considered within the scope of simple models. The effect of nonstoichiometry, impurities, C and Si faces on the heteropolytype epitaxy are considered. By means of Harrison’s bond orbital model it is shown that the adsorption energy for the C face is greater than for the Si face. On the bases of the earlier proposed D-model and vacancy model it is proposed that impurities which enforce the possibility of  interpolytype transition decrease the time of processes and the transition layer widths. For the interpretation of the transition layer periodic structure consisted of initial and final polytypes, the model of specific spinodal decomposition is proposed.


Keywords


silicon carbide; heteropolytype epitaxy; impurities; models

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DOI: http://dx.doi.org/10.24294/cse.v0i0.423

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