Optimizing lithium niobate thin films for enhanced optoelectronic devices: a sustainable approach to addressing the energy crisis

Abstract

In response to the prevailing energy crisis, this research focuses on elevating the potential of lithium niobate (LN) thin films for advanced optoelectronic applications. Employing electron beam evaporation, films undergo precise annealing (700°C to 1100°C), revealing a structural evolution through X-ray diffraction—crystallite sizes transition from 69.34 nm (unannealed) to 47.90 nm (1100°C). Scanning electron microscopy captures the transformation from coarse grains to photonic crystal clusters, while energy dispersion X-ray analysis discloses LN's composition (97.27 wt.% oxygen, 2.73 wt.% niobium). Rutherford backscattering spectroscopy illustrates surface damage post-Helium ion implantation, proportionate to depth. UV-VIS spectrophotometry highlights a significant blue shift in the optical band gap (3.70 eV to 2.52 eV), with further reduction at 700°C (2.48 eV) and a climactic shift at 1100°C (2.68 eV). This study not only addresses the pressing energy crisis but also emphasizes the indispensable role of lithium niobate in shaping the future of optoelectronics. It provides insights into tailoring LN properties for sustainable advancements in optoelectronic devices, marking a crucial chapter in our collective journey towards energy resilience. The urgency of innovation in the face of global challenges is underscored, marking a crucial chapter in our collective journey towards energy resilience.