Privezentsev V.V.


Impurity cluster formation in 64Zn+ ion hot implanted and subsequently thermal oxidized Si substrates are studied. After implantation on sample surface and in sample near-surface layer the metallic Zn clusters with average size near 200nm on sample surface and clusters with size about 20nm in a sample body were created. After annealing at 700°C there was transformation from metal Zn clusterss to its oxide form such as ZnO(core)/Zn2SiO4(shell) on a sample surface and conservation the metallic Zn phase in a sample body. We propose an explanation for this phenomenon by temperature dependence of the oxygen molecules diffusion in silicon body and zinc atom opposite moving to the sample surface during annealing.


silicon, zinc, hot implantation, thermal oxidation, Zn and ZnO clusters

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