Prof. Alexander Alexandrovich Lebedev
Ioffe Institute, Russia
Lebedev Alexander Alexandrovich graduate from St Petersburg Electrical Engineering University (LETI)in 1983. Since 1983 he is working at Ioffe Institute , at the present time (since 1999), in the position of Head of Laboratory «Physics of the semiconductor Devices» and Director of Solid State Electronic Division (since 2014). Since 2004 he began teaching students LETI at position of Full Professor. A.A.Lebedev is specialist in technology, physics and device application of Wide band gap semiconductors. He was first in the world that used Capacitance Spectroscopy (DLTS) for investigation deep levels in wide band gap semiconductors. The parameters of main intrinsic, impurity and radiation induced electrically active centers were defined in 4H-, 3C and 6H- SiC, interaction between deep levels and point defects was studied and effects of the traps on recombination processes were investigated. He take part and, later, is a head of developing technology of the different SiC based devices (Diodes, Schottky diode, JFET, MESFET, UV photodetector, IMPAT –diode, nuclear detector). Last 10 years Lebedev AA get new results in growth and investigation of graphene films on SiC surface.